Inchange semiconductor product specification silicon pnp power transistor. Savantic semiconductor product specification silicon pnp power transistors 2sb1429 description with to3pl package complement to type 2sd2155 applications power amplifier applications. Collector current dc collector dissipation junction temperature storage temperature vcbo vceo vebo ic pc tj tstg 200 200 6 15 150 15055150 v v v a w. Storage temperature range tstg 55 150 c characteristic symbol test condition min. Only three wires are required to communicate with the clockram. High current capability high power dissipation complementary to 2sc3281 absolute maximum rating ta25c characteristic collectorbase voltage collectoremitter voltage emitterbase voltage collector current dc collector dissipation junction temperature storage temperature symbol vcbo vceo vebo ic. If the checkbox is invisible, the corresponding document cannot be downloaded in batch. I b 0 200 v v cesat collectoremitter saturation voltage i c 10a. Semiconductor products are used in a, supplies using a crystal mesh pattern, toshiba has reduced the storage time tstg and fall time tf, electronic devices fuelling demand for smdtype power transistors. M absolute maximum ratings ta25 c, unless otherwise specified parameter symbol ratings unit collectorbase voltage vcbo60 v collectoremitter voltage vceo50 v collectoremitter voltage vebo5 v dc ib1 a base current. Tip3055d tip3055 npn, tip2955 pnp complementary silicon power transistors designed for general. Storage temperature vcbo vceo vebo ic pc tj tstg 200 200 6 15 150 15055150 v v v a w. Fall time ic, collector current ma 20 30 50 70 100 10 5.
Storage temperature vcbo vceo vebo ic pc tj tstg200200615 150 15055150 v v v a w c c electrical characteristics ta25cccc characterristic symbol test condition min typ max unit collector base breakdown voltage collector emitter breakdown voltage emitter base breakdown voltage collector cutoff current emitter cutoff current dc. Replacement and equivalent transistor for the 2sc3281 you can replace the 2sc3281 with the 2sc3320, 2sc5200, 2sc5200n, 2sc5242, 2sc5358, 2sc5949, 2sc6011, 2sc6011a, 2sc6011ao, 2sc6011ap, 2sc6011ay, 2sd, fja43, fjl4315, ktc5200, ktc5200a, ktc5242, ktc5242a. First, rst turns on the control logic which allows access to the shift register for the addresscommand sequence. Max unit collector cutoff current i cbo vcb 230 v, ie 0. Mospec, alldatasheet, datasheet, datasheet search site for electronic. Motorola power transistor substitution and cross reference guide. No responsibility is assumed by toshiba for any infringements of patents or other rights of the third parties which may result from its use. Junction temperature storage temperature symbol rating unit vcbo vceo vebo. V8r,ceo 200vmin complement to type 2sc3281 applications.
The gain of the 2sa1r will be in the range from 55 to 110, 2sa1o ranges from 80 to 160. Wings pnp planar silicon transistoraudio power amplifier dc to dc converter,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Second, the rst signal provides a method of terminating either single byte or multiple byte. Offer 2sa2o tos from kynix semiconductor hong kong limited. Trans npn 200v 15a 221f1a online from elcodis, view and download 2sc3281o pdf datasheet, transistors bjt single specifications. High power dissipation datasheet search, datasheets, datasheet search site for electronic components and semiconductors.
Offer 2sa2 o tos from kynix semiconductor hong kong limited. Jmnic product specification silicon pnp power transistors 2sa2 description with to3pl package complement to type 2sc3281 applications power amplifier applications recommended for 100w high fidelity audio frequency amplifier output stage pinning pin description 1 emitter collector. Silicon pnp power transistors 2sa6 2sa6a 2sa6b description with to220fa package complement to type 2sc3298,2sc3298a,2sc3298b applications power amplifier applications driver stage amplifier applications pinning pin. Jmnic product specification silicon pnp power transistors 2sa2 description with to3pl package complement to type 2sc3281 applications power amplifier applications recommended for 100w high fidelity audio frequency amplifier output stage pinning pin description 1 emitter. Pure storage flasharrayx, the worlds first 100% allflash endtoend nvme and nvmeof array, now optionally includes a storage class memory boost to address the most demanding enterprise applications performance requirements.
Recommended for 100w high fidelity audio frequency amplifier output stage. Here is an image showing the pin diagram of the this transistor. V brceo 200vmin complement to type 2sc3281 applications power amplifier applications recommend for 100w high fidelity audio frequency amplifier output stage applications. Maxunit v brceo collectoremitter breakdown voltage i c 50ma. Mospec power transistors15a,200v,150w,alldatasheet, datasheet, datasheet search site for. The information contained herein is presented only as guide for the applications of our products. Silicon pnp power transistor 2sa2 electrical characteristics tc25c unless otherwise specified symbol vbrceo vcesat veeon icbo iebo hpe1. Unit collector cutoff current icbo vcb 200v, ie 0 5. You can replace the 2sa1 with the 2sa2, 2sa86, 2sa86a. M absolute maximum ratings ta25 c, unless otherwise specified parameter symbol ratings unit collectorbase voltage vcbo60 v collectoremitter voltage vceo50 v collectoremitter voltage vebo5 v dc ib1 a base current pulse ibp2 a.
High power dissipation datasheet search, datasheets, datasheet search site for electronic components and semiconductors, integrated circuits, diodes and other semiconductors. Toshiba transistor silicon pnp epitaxial type pct process. Storage temperature range tstg 55150 ac eiaj a toshiba 221f1a electrical. Trans pnp 200v 15a 221f1a online from elcodis, view and download 2sa2o pdf datasheet, transistors bjt single specifications. Jmnic product specification silicon pnp power transistors 2sa2 description with to 3pl. Description pnp planar silicon transistoraudio power amplifier dc to dc converter. Transistor 2sa1123 silicon pnp epitaxial planer type for lowfrequency high breakdown voltage amplification complementary to 2sc2631 features satisfactory foward current transfer ratio h fe collector current ic characteristics. Silicon pnp power transistors 2sa6 2sa6a 2sa6b description with to220fa package complement to type 2sc3298,2sc3298a,2sc3298b applications power amplifier applications driver stage amplifier.
Storage temperature tstg55150 c electrical characteristics characteristic symbol test condition min. Power transistors15a,200v,150w, 2sa2 datasheet, 2sa2 circuit, 2sa2 data sheet. Inchange semiconductor isc product specification isc silicon pnp power transistor 2sa2 electrical characteristics t c25. Unit collector cut off current icbo vcb 80v, ie 0a 100 a collector emitter breakdown voltage vbrceo ic 50ma, ib 0a 80 v dc current gain hfe vce 4v, ic 1a vce 4v, ic 0. Trans pnp 200v 15a 221f1a online from elcodis, view and download 2sa2 o pdf datasheet, transistors bjt single specifications. Savantic semiconductor product specification 2 silicon npn power transistors 2sc3281 characteristics tj25 unless otherwise specified. Complement to type 2sa2 applications power amplifier applications. Ds2 2 of interfacing the ds2 with a microprocessor is simplified by using synchronous serial communication. Compare pricing for toshiba 2sa1 across 3 distributors and discover alternative parts, cad models, technical specifications, datasheets, and more on octopart. Toshiba corporation 2sa2 the information contained here is subject to change without notice. I semiconductors encourages customers to verify that datasheets are current before placing orders. The 2sa1 transistor might have a current gain anywhere between 55 and 160. Range of storage temperature 1 pw10ms, single pulse 2 each terminal mounted on a reference land. Data can be transferred to and from the clockram 1 byte at a time or in a burst of up to 31 bytes.